BSO301SPNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Turn-Off Delay Time :

130 ns

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

15 ns

Continuous Drain Current (ID) :

14.9A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

12.6A Ta

Fall Time (Typ) :

110 ns

ECCN Code :

EAR99

FET Type :

P-Channel

Number of Terminations :

8

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1.79W

Mounting Type :

Surface Mount

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Published :

2002

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

60A

Rds On (Max) @ Id, Vgs :

8m Ω @ 14.9A, 10V

Rise Time :

22ns

Vgs (Max) :

±20V

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No