BSO303PH

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2V @ 100µA

Published :

2011

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.2A, 10V

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-30 Code :

R-PDSO-G8

FET Type :

2 P-Channel (Dual)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Max Dual Supply Voltage :

-30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.29.00.95

Pin Count :

8

Rise Time :

13ns

Series :

OptiMOS™

Halogen Free :

Halogen Free

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

32.8A

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Power - Max :

2W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2678pF @ 25V

Drain-source On Resistance-Max :

0.021Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Contact Plating :

Tin

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

97 mJ

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7A

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

7A