BD137G
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- Mfr.Part #
- BD137G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126
- Stock
- 6,892
- In Stock ：
- 6,892
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 25
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1.25W
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2001
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1.5A
- Current Rating :
- 6A
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1.25W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Pin Count :
- 3
- Length :
- 7.74mm
- JESD-609 Code :
- e3
- Height :
- 11.04mm
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 65W
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Width :
- 2.66mm
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 3
- Base Part Number :
- BD137
- Datasheets
- BD137G
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NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD137G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 1.5A volts at its maximum.
BD137G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 6A
BD137G Applications
There are a lot of ON Semiconductor
BD137G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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