BD13516STU

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Mfr.Part #
BD13516STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 1.5A TO126-3
Stock
2,409
In Stock :
2,409

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
45V
Pbfree Code :
yes
Packaging :
Tube
Transition Frequency :
250MHz
Current Rating :
1.5A
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Power Dissipation :
1.25W
Collector Base Voltage (VCBO) :
45V
Mount :
Through Hole
Polarity/Channel Type :
NPN
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Element Configuration :
Single
Number of Elements :
1
Collector Emitter Saturation Voltage :
500mV
Current - Collector Cutoff (Max) :
100nA ICBO
Voltage - Rated DC :
45V
Weight :
761mg
Collector Emitter Breakdown Voltage :
45V
Transistor Application :
SWITCHING
Transistor Type :
NPN
Max Collector Current :
1.5A
Width :
3.45mm
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Base Part Number :
BD135
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Number of Pins :
3
Radiation Hardening :
No
Height :
11.2mm
Package / Case :
TO-225AA, TO-126-3
hFE Min :
40
Max Power Dissipation :
1.25W
Length :
8.3mm
Published :
2013
Factory Lead Time :
22 Weeks
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Datasheets
BD13516STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13516STU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:BD135, Number of Terminations:3, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, BD13516STU pinout, BD13516STU datasheet PDF, BD13516STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13516STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13516STU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

BD13516STU Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 1.5A volts is possible.

BD13516STU Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD13516STU Applications


There are a lot of ON Semiconductor
BD13516STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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