BD135

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Lead Free :

Lead Free

Max Collector Current :

1.5A

Case Connection :

Isolated

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

45V

Pin Count :

3

Contact Plating :

Tin

JESD-609 Code :

e3

Length :

7.8mm

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Power Dissipation :

1.25W

Element Configuration :

Single

Radiation Hardening :

No

Max Power Dissipation :

1.25W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Number of Terminations :

3

Max Breakdown Voltage :

45V

Package / Case :

TO-225AA, TO-126-3

Number of Elements :

1

Collector Emitter Saturation Voltage :

500mV

Transistor Type :

NPN

ECCN Code :

EAR99

Height :

10.8mm

Collector Base Voltage (VCBO) :

45V

Factory Lead Time :

8 Weeks

hFE Min :

25

Width :

2.7mm

Base Part Number :

BD135

Weight :

4.535924g

Mount :

Through Hole

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

45V

Transition Frequency :

250MHz