BD135G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

2 Weeks

Pin Count :

3

Collector Emitter Breakdown Voltage :

45V

hFE Min :

25

Length :

7.74mm

Width :

2.66mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Height :

11.04mm

Voltage - Rated DC :

45V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

45V

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

JESD-609 Code :

e3

Packaging :

Bulk

Collector Emitter Saturation Voltage :

500mV

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Current Rating :

1.5A

Max Power Dissipation :

1.25W

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Max Collector Current :

1.5A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-225AA, TO-126-3

Power Dissipation :

1.25W

Published :

1999

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

45V

Base Part Number :

BD135

Radiation Hardening :

No