BD135G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

45V

Power Dissipation :

1.25W

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

45V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Current Rating :

1.5A

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

4.535924g

Height :

11.04mm

Radiation Hardening :

No

hFE Min :

25

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Base Part Number :

BD135

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Width :

2.66mm

Contact Plating :

Tin

Package / Case :

TO-225AA, TO-126-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Length :

7.74mm

ECCN Code :

EAR99

Number of Terminations :

3

Surface Mount :

No

Lead Free :

Lead Free

Max Collector Current :

1.5A

Mounting Type :

Through Hole

Max Power Dissipation :

1.25W

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Voltage - Rated DC :

45V

Collector Emitter Voltage (VCEO) :

45V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pbfree Code :

yes

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Packaging :

Bulk

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

500mV