BD135G

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Mfr.Part #
BD135G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 1.5A TO126
Stock
112
In Stock :
112

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
45V
Power Dissipation :
1.25W
Time@Peak Reflow Temperature-Max (s) :
40
Collector Base Voltage (VCBO) :
45V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Pin Count :
3
Peak Reflow Temperature (Cel) :
260
Current Rating :
1.5A
Current - Collector Cutoff (Max) :
100nA ICBO
Weight :
4.535924g
Height :
11.04mm
Radiation Hardening :
No
hFE Min :
25
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Base Part Number :
BD135
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Transistor Application :
AMPLIFIER
JESD-609 Code :
e3
Width :
2.66mm
Contact Plating :
Tin
Package / Case :
TO-225AA, TO-126-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
1999
Length :
7.74mm
ECCN Code :
EAR99
Number of Terminations :
3
Surface Mount :
No
Lead Free :
Lead Free
Max Collector Current :
1.5A
Mounting Type :
Through Hole
Max Power Dissipation :
1.25W
Element Configuration :
Single
Factory Lead Time :
2 Weeks
Voltage - Rated DC :
45V
Collector Emitter Voltage (VCEO) :
45V
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Pbfree Code :
yes
Polarity/Channel Type :
NPN
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Packaging :
Bulk
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
500mV
Datasheets
BD135G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD135G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:BD135, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, BD135G pinout, BD135G datasheet PDF, BD135G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD135G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD135G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD135G Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

BD135G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A


BD135G Applications


There are a lot of ON Semiconductor
BD135G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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