BD13510STU
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- Mfr.Part #
- BD13510STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126-3
- Stock
- 2,329
- In Stock ：
- 2,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 45V
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.25W
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Height :
- 11.2mm
- Element Configuration :
- Single
- Base Part Number :
- BD135
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 40
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Number of Pins :
- 3
- Published :
- 2013
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 1.5A
- Width :
- 3.45mm
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 1.25W
- Contact Plating :
- Tin
- Current Rating :
- 1.5A
- Collector Base Voltage (VCBO) :
- 45V
- Mount :
- Through Hole
- Transition Frequency :
- 50MHz
- Factory Lead Time :
- 6 Weeks
- Length :
- 8.3mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Weight :
- 761mg
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Datasheets
- BD13510STU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13510STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
BD13510STU Applications
There are a lot of ON Semiconductor
BD13510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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