BD13510STU
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- Mfr.Part #
- BD13510STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126-3
- Stock
- 2,329
- In Stock ：
- 2,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e3
- Length :
- 8.3mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tube
- Current Rating :
- 1.5A
- Width :
- 3.45mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Base Part Number :
- BD135
- Transition Frequency :
- 50MHz
- hFE Min :
- 40
- Lead Free :
- Lead Free
- Published :
- 2013
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Weight :
- 761mg
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- Height :
- 11.2mm
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Power Dissipation :
- 1.25W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Mount :
- Through Hole
- Voltage - Rated DC :
- 45V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 500mV
- Max Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.25W
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Datasheets
- BD13510STU
BD13510STU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13510STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
BD13510STU Applications
There are a lot of ON Semiconductor
BD13510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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