BD13510STU
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- Mfr.Part #
- BD13510STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126-3
- Stock
- 2,329
- In Stock ：
- 2,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Published :
- 2013
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- 150°C TJ
- Weight :
- 761mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Width :
- 3.45mm
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- hFE Min :
- 40
- Voltage - Rated DC :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 8.3mm
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Terminations :
- 3
- Transition Frequency :
- 50MHz
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.25W
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Base Part Number :
- BD135
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 11.2mm
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.25W
- Max Collector Current :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD13510STU
BD13510STU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13510STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
BD13510STU Applications
There are a lot of ON Semiconductor
BD13510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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