BD135

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Collector Emitter Saturation Voltage :

500mV

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Element Configuration :

Single

Mount :

Through Hole

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Transition Frequency :

250MHz

Power Dissipation :

1.25W

Collector Emitter Breakdown Voltage :

45V

Lead Free :

Lead Free

Max Collector Current :

1.5A

Emitter Base Voltage (VEBO) :

5V

Case Connection :

Isolated

Weight :

4.535924g

Factory Lead Time :

8 Weeks

Number of Elements :

1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pin Count :

3

Width :

2.7mm

Max Power Dissipation :

1.25W

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

45V

Base Part Number :

BD135

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Application :

AMPLIFIER

Height :

10.8mm

Collector Base Voltage (VCBO) :

45V

hFE Min :

25

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-225AA, TO-126-3

Packaging :

Tube

Length :

7.8mm

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Type :

NPN