BD135

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Case Connection :

Isolated

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Weight :

4.535924g

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Mount :

Through Hole

Transition Frequency :

250MHz

Width :

2.7mm

Length :

7.8mm

Transistor Element Material :

SILICON

Transistor Type :

NPN

Contact Plating :

Tin

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Height :

10.8mm

Element Configuration :

Single

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

REACH SVHC :

No SVHC

Number of Elements :

1

Operating Temperature :

150°C TJ

Packaging :

Tube

Max Collector Current :

1.5A

Collector Emitter Saturation Voltage :

500mV

Polarity/Channel Type :

NPN

Max Breakdown Voltage :

45V

hFE Min :

25

Max Power Dissipation :

1.25W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BD135

Collector Base Voltage (VCBO) :

45V

Package / Case :

TO-225AA, TO-126-3

Power Dissipation :

1.25W

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

ECCN Code :

EAR99