BD135

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

Radiation Hardening :

No

Length :

7.8mm

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Power Dissipation :

1.25W

Pin Count :

3

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

45V

hFE Min :

25

Case Connection :

Isolated

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

45V

Max Power Dissipation :

1.25W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

1.5A

Width :

2.7mm

Height :

10.8mm

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

45V

Element Configuration :

Single

Base Part Number :

BD135

Polarity/Channel Type :

NPN

Weight :

4.535924g

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

45V

Lead Free :

Lead Free

Number of Pins :

3

Transition Frequency :

250MHz

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Terminations :

3

Transistor Type :

NPN

Number of Elements :

1

Packaging :

Tube

Mounting Type :

Through Hole

Package / Case :

TO-225AA, TO-126-3