BD135

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Transition Frequency :

250MHz

Packaging :

Tube

Height :

10.8mm

Lead Free :

Lead Free

JESD-609 Code :

e3

Mount :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Case Connection :

Isolated

Collector Emitter Voltage (VCEO) :

45V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Pin Count :

3

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Base Part Number :

BD135

Power Dissipation :

1.25W

Weight :

4.535924g

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

500mV

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

45V

Max Power Dissipation :

1.25W

Transistor Type :

NPN

Max Collector Current :

1.5A

Package / Case :

TO-225AA, TO-126-3

hFE Min :

25

Max Breakdown Voltage :

45V

Mounting Type :

Through Hole

Length :

7.8mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Width :

2.7mm

Element Configuration :

Single