BD135TG
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- Mfr.Part #
- BD135TG
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126
- Stock
- 339
- In Stock ：
- 339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.25W
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 45V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 45V
- Continuous Collector Current :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Max Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 25
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.25W
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Number of Pins :
- 3
- Published :
- 2013
- Datasheets
- BD135TG
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NPN -55°C~150°C TJ 100nA ICBO 1 Elements NPN TO-225AA, TO-126-3 Tube Through Hole
BD135TG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD135TG Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BD135TG Applications
There are a lot of ON Semiconductor
BD135TG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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