BD135TG

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Mfr.Part #
BD135TG
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 1.5A TO126
Stock
339
In Stock :
339

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
Continuous Collector Current :
1.5A
Number of Pins :
3
Collector Base Voltage (VCBO) :
45V
Number of Elements :
1
Pbfree Code :
yes
Power Dissipation :
1.25W
Published :
2013
Max Collector Current :
1.5A
Pin Count :
3
Packaging :
Tube
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
100nA ICBO
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 19 hours ago)
hFE Min :
25
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Max Power Dissipation :
1.25W
Contact Plating :
Tin
Surface Mount :
No
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
500mV
Element Configuration :
Single
Factory Lead Time :
2 Weeks
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
45V
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
45V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Datasheets
BD135TG
Introducing Transistors - Bipolar (BJT) - Single onsemi BD135TG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, BD135TG pinout, BD135TG datasheet PDF, BD135TG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD135TG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD135TG


NPN -55°C~150°C TJ 100nA ICBO 1 Elements NPN TO-225AA, TO-126-3 Tube Through Hole

BD135TG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

BD135TG Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BD135TG Applications


There are a lot of ON Semiconductor
BD135TG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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