BD1356STU

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Mfr.Part #
BD1356STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 1.5A TO126-3
Stock
9,958
In Stock :
9,958

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2013
Collector Base Voltage (VCBO) :
45V
Max Collector Current :
1.5A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Transistor Type :
NPN
Power Dissipation :
1.25W
RoHS Status :
RoHS Compliant
Collector Emitter Breakdown Voltage :
45V
Emitter Base Voltage (VEBO) :
5V
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Pbfree Code :
yes
Mount :
Through Hole
Collector Emitter Saturation Voltage :
500mV
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Packaging :
Tube
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 5 days ago)
Weight :
761mg
Lead Free :
Lead Free
Package / Case :
TO-225AA, TO-126-3
hFE Min :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Polarity/Channel Type :
NPN
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
45V
Base Part Number :
BD135
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Contact Plating :
Tin
Max Power Dissipation :
1.25W
Number of Terminations :
3
Transition Frequency :
250MHz
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
100nA ICBO
Voltage - Rated DC :
45V
JESD-30 Code :
R-PSFM-T3
Current Rating :
1.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Number of Elements :
1
ECCN Code :
EAR99
Datasheets
BD1356STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD1356STU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Base Part Number:BD135, Number of Terminations:3, BD1356STU pinout, BD1356STU datasheet PDF, BD1356STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD1356STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD1356STU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

BD1356STU Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 1.5A volts is possible.

BD1356STU Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD1356STU Applications


There are a lot of ON Semiconductor
BD1356STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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