BD13516S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

45V

Collector Emitter Saturation Voltage :

500mV

Contact Plating :

Tin

ECCN Code :

EAR99

Max Power Dissipation :

1.25W

Transistor Type :

NPN

Radiation Hardening :

No

Number of Terminations :

3

Max Collector Current :

1.5A

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Voltage (VCEO) :

45V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Max Breakdown Voltage :

45V

Transistor Application :

SWITCHING

Power Dissipation :

1.25W

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

80V

Polarity/Channel Type :

NPN

Mount :

Through Hole

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Pbfree Code :

yes

Transition Frequency :

250MHz

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Published :

2013

Voltage - Rated DC :

45V

Element Configuration :

Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Current Rating :

1.5A

Weight :

761mg

Base Part Number :

BD135

Mounting Type :

Through Hole

Packaging :

Bulk

hFE Min :

40