BD13516S

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Mfr.Part #
BD13516S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 1.5A TO126-3
Stock
1,928
In Stock :
1,928

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current Rating :
1.5A
Power Dissipation :
1.25W
Published :
2013
Max Power Dissipation :
1.25W
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Max Breakdown Voltage :
45V
ECCN Code :
EAR99
Element Configuration :
Single
Contact Plating :
Tin
Lead Free :
Lead Free
Number of Terminations :
3
Package / Case :
TO-225AA, TO-126-3
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Mounting Type :
Through Hole
Transistor Type :
NPN
Mount :
Through Hole
Collector Emitter Saturation Voltage :
500mV
Collector Base Voltage (VCBO) :
45V
Factory Lead Time :
2 Weeks
Collector Emitter Voltage (VCEO) :
45V
Base Part Number :
BD135
Collector Emitter Breakdown Voltage :
80V
hFE Min :
40
Max Collector Current :
1.5A
Radiation Hardening :
No
Transition Frequency :
250MHz
Voltage - Rated DC :
45V
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Weight :
761mg
Number of Elements :
1
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Operating Temperature :
150°C TJ
Datasheets
BD13516S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13516S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Base Part Number:BD135, Number of Pins:3, Operating Temperature:150°C TJ, BD13516S pinout, BD13516S datasheet PDF, BD13516S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13516S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13516S


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD13516S Overview


DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 1.5A volts.

BD13516S Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD13516S Applications


There are a lot of ON Semiconductor
BD13516S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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