BD13516S

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Mfr.Part #
BD13516S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 1.5A TO126-3
Stock
1,928
In Stock :
1,928

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Max Collector Current :
1.5A
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
45V
Polarity/Channel Type :
NPN
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
45V
Radiation Hardening :
No
Max Power Dissipation :
1.25W
ECCN Code :
EAR99
Base Part Number :
BD135
Transistor Element Material :
SILICON
hFE Min :
40
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
1.25W
Current Rating :
1.5A
Max Breakdown Voltage :
45V
Collector Emitter Breakdown Voltage :
80V
Number of Pins :
3
Operating Temperature :
150°C TJ
Element Configuration :
Single
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Weight :
761mg
Number of Terminations :
3
Published :
2013
Transition Frequency :
250MHz
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Transistor Type :
NPN
Factory Lead Time :
2 Weeks
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Mount :
Through Hole
Packaging :
Bulk
Package / Case :
TO-225AA, TO-126-3
Voltage - Rated DC :
45V
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
500mV
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
BD13516S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13516S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD135, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, BD13516S pinout, BD13516S datasheet PDF, BD13516S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13516S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13516S


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD13516S Overview


DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 1.5A volts.

BD13516S Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD13516S Applications


There are a lot of ON Semiconductor
BD13516S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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