BD13516S
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- Mfr.Part #
- BD13516S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1.5A TO126-3
- Stock
- 1,928
- In Stock ：
- 1,928
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transition Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 45V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.25W
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 500mV
- Max Collector Current :
- 1.5A
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1.25W
- Voltage - Rated DC :
- 45V
- Base Part Number :
- BD135
- Weight :
- 761mg
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Bulk
- Current Rating :
- 1.5A
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Published :
- 2013
- Contact Plating :
- Tin
- Datasheets
- BD13516S
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13516S Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 1.5A volts.
BD13516S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz
BD13516S Applications
There are a lot of ON Semiconductor
BD13516S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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