APTM50UM25SG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

UPPER

Input Capacitance (Ciss) (Max) @ Vds :

17500pF @ 25V

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

149A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

FET Type :

N-Channel

Continuous Drain Current (ID) :

149A

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Number of Terminations :

4

Package / Case :

J3 Module

Avalanche Energy Rating (Eas) :

1600 mJ

Mount :

Chassis Mount

Drain to Source Voltage (Vdss) :

500V

Published :

2004

Power Dissipation-Max :

1250W Tc

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

550A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 10mA

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.025Ohm

Mounting Type :

Chassis Mount

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

25m Ω @ 74.5A, 10V

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

364nC @ 10V

JESD-30 Code :

R-XUFM-X4

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

500V