APTM50UM19SG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1136W Tc

Current - Continuous Drain (Id) @ 25°C :

163A Tc

Terminal Finish :

TIN SILVER COPPER

Avalanche Energy Rating (Eas) :

2500 mJ

Mount :

Chassis Mount

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

492nC @ 10V

Drain-source On Resistance-Max :

0.019Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Terminal Form :

UNSPECIFIED

Package / Case :

J3 Module

Drain to Source Voltage (Vdss) :

500V

Published :

2004

Continuous Drain Current (ID) :

163A

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

22400pF @ 25V

Rds On (Max) @ Id, Vgs :

19m Ω @ 81.5A, 10V

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

652A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 10mA

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Terminal Position :

UPPER

Pbfree Code :

yes

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-XUFM-X4

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR