APTM50DAM38CTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN SILVER COPPER

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

2500 mJ

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

RoHS Status :

RoHS Compliant

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

500V

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Drain to Source Voltage (Vdss) :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Transistor Element Material :

SILICON

Number of Pins :

4

Packaging :

Bulk

Continuous Drain Current (ID) :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Published :

1997

Power Dissipation :

694W

Vgs(th) (Max) @ Id :

5V @ 5mA

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Terminal Form :

UNSPECIFIED

JESD-609 Code :

e1

Pin Count :

12

Package / Case :

SP4

Power Dissipation-Max :

694W Tc

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

360A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Chassis Mount, Screw

Number of Terminations :

12