APTM50DAM35TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

99A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 5mA

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Pulsed Drain Current-Max (IDM) :

396A

Published :

2016

Number of Terminations :

12

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

3000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

99A Tc

Mount :

Chassis Mount, Screw

Number of Pins :

4

Power Dissipation :

781W

Terminal Position :

UPPER

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP4

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Packaging :

Bulk

Power Dissipation-Max :

781W Tc

Case Connection :

Isolated

Pin Count :

12

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.039Ohm

Operating Temperature :

-40°C~150°C TJ

Qualification Status :

Not Qualified