APTM50DAM17G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-XUFM-X5

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 10mA

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Factory Lead Time :

36 Weeks

Pin Count :

5

Turn On Delay Time :

21 ns

Power Dissipation :

1.25kW

Pbfree Code :

yes

Rise Time :

38ns

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

SP6

Case Connection :

Isolated

Number of Terminations :

5

Turn-Off Delay Time :

75 ns

Radiation Hardening :

No

Number of Elements :

1

Vgs (Max) :

±30V

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 90A, 10V

Number of Pins :

6

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount, Screw

Pulsed Drain Current-Max (IDM) :

720A

Terminal Finish :

TIN SILVER COPPER

FET Type :

N-Channel

Fall Time (Typ) :

93 ns

Continuous Drain Current (ID) :

180A

Power Dissipation-Max :

1250W Tc

Gate to Source Voltage (Vgs) :

30V

Published :

2012

Packaging :

Bulk

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V