APTM20DAM05G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Pin Count :

5

Drain to Source Voltage (Vdss) :

200V

Radiation Hardening :

No

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

27400pF @ 25V

Terminal Finish :

TIN SILVER COPPER

Turn-Off Delay Time :

81 ns

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

99 ns

Rise Time :

56ns

Number of Pins :

6

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XUFM-X5

Vgs(th) (Max) @ Id :

5V @ 10mA

Turn On Delay Time :

28 ns

DS Breakdown Voltage-Min :

200V

Gate Charge (Qg) (Max) @ Vgs :

448nC @ 10V

Continuous Drain Current (ID) :

317A

Terminal Position :

UPPER

Power Dissipation-Max :

1136W Tc

Mount :

Chassis Mount, Screw

Package / Case :

SP6

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

6m Ω @ 158.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

317A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Factory Lead Time :

36 Weeks

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

2500 mJ

Mounting Type :

Chassis Mount