APTM120U10DAG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1200V

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

UPPER

Published :

2008

Continuous Drain Current (ID) :

116A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pin Count :

5

Input Capacitance (Ciss) (Max) @ Vds :

28900pF @ 25V

Number of Pins :

6

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

120m Ω @ 58A, 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

3290W Tc

Avalanche Energy Rating (Eas) :

3200 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 20mA

Number of Terminations :

5

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount, Screw

Package / Case :

SP6

JESD-30 Code :

R-XUFM-X5

Packaging :

Bulk

Mounting Type :

Chassis Mount

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

1100nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated