APTM120DA68T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

1

Pin Count :

12

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Power Dissipation :

357W

JESD-609 Code :

e1

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Chassis Mount

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

1200V

Mount :

Chassis Mount, Screw

Vgs (Max) :

±30V

Number of Terminations :

12

Package / Case :

SP1

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

816m Ω @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Power Dissipation-Max :

357W Tc

Continuous Drain Current (ID) :

15A

Terminal Form :

UNSPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6696pF @ 25V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

90A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Case Connection :

Isolated