APTM120DA29TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 5mA

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

374nC @ 10V

Terminal Position :

UPPER

Power Dissipation-Max :

780W Tc

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

TIN SILVER COPPER

Rds On (Max) @ Id, Vgs :

348m Ω @ 17A, 10V

Number of Elements :

1

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SP4

Pin Count :

12

Drain to Source Voltage (Vdss) :

1200V

Number of Terminations :

12

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

780W

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Continuous Drain Current (ID) :

34A

Reach Compliance Code :

Unknown

Case Connection :

Isolated