APTM10UM02FAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

1660W Tc

Number of Elements :

1

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0025Ohm

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Bulk

Pbfree Code :

yes

Power Dissipation :

1.66kW

Vgs(th) (Max) @ Id :

4V @ 10mA

JESD-609 Code :

e1

Published :

2012

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1360nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

6

Mounting Type :

Chassis Mount

FET Type :

N-Channel

Rise Time :

240ns

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 200A, 10V

Turn On Delay Time :

160 ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

500 ns

Terminal Position :

UPPER

Pin Count :

5

JESD-30 Code :

R-XUFM-X5

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP6

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

5

Continuous Drain Current (ID) :

570A

Vgs (Max) :

±30V

Factory Lead Time :

36 Weeks

Fall Time (Typ) :

160 ns

Current - Continuous Drain (Id) @ 25°C :

570A Tc

Mount :

Chassis Mount, Screw

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE