APTM10DAM05TG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

135 ns

JESD-609 Code :

e1

Published :

2012

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Mount :

Chassis Mount, Screw

Power Dissipation-Max :

780W Tc

Avalanche Energy Rating (Eas) :

3000 mJ

Rise Time :

165ns

Packaging :

Bulk

Vgs (Max) :

±30V

Radiation Hardening :

No

Number of Elements :

1

Pin Count :

12

ECCN Code :

EAR99

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Current - Continuous Drain (Id) @ 25°C :

278A Tc

Factory Lead Time :

36 Weeks

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Number of Pins :

4

Turn-Off Delay Time :

280 ns

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Power Dissipation :

780W

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 5mA

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Drain-source On Resistance-Max :

0.005ohm

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SP4

Turn On Delay Time :

80 ns

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

12

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

278A

Drive Voltage (Max Rds On,Min Rds On) :

10V