APTM100UM65SAG
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- Mfr.Part #
- APTM100UM65SAG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 145A SP6
- Stock
- 34,463
- In Stock ：
- 34,463
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 145A
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.078Ohm
- JESD-609 Code :
- e1
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 72.5A, 10V
- Published :
- 1999
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 28500pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 20mA
- Terminal Position :
- UPPER
- Gate Charge (Qg) (Max) @ Vgs :
- 1068nC @ 10V
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Bulk
- Drain to Source Voltage (Vdss) :
- 1000V
- Turn On Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Mounting Type :
- Chassis Mount
- Pbfree Code :
- yes
- Number of Pins :
- 6
- Rise Time :
- 14ns
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- JESD-30 Code :
- R-PUFM-X2
- Fall Time (Typ) :
- 55 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Package / Case :
- SP6
- Turn-Off Delay Time :
- 140 ns
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 145A Tc
- Mount :
- Chassis Mount, Screw
- Operating Temperature :
- -40°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 580A
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 3250W Tc
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Datasheets
- APTM100UM65SAG
N-Channel Bulk 78m Ω @ 72.5A, 10V ±30V 28500pF @ 25V 1068nC @ 10V 1000V SP6
APTM100UM65SAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.A device's maximum input capacitance is 28500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 145A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 580A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM100UM65SAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 145A
the turn-off delay time is 140 ns
based on its rated peak drain current 580A.
a 1000V drain to source voltage (Vdss)
APTM100UM65SAG Applications
There are a lot of Microsemi Corporation
APTM100UM65SAG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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