APTM100DA40T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP1

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation-Max :

357W Tc

Terminal Position :

UPPER

Drain-source On Resistance-Max :

0.48Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Number of Terminations :

12

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

Number of Pins :

1

Terminal Form :

UNSPECIFIED

Published :

2007

Pin Count :

12

Continuous Drain Current (ID) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Reach Compliance Code :

Unknown

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

357W

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

480m Ω @ 16A, 10V

JESD-609 Code :

e1