APT15GP60BDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

8ns/29ns

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6V

Current - Collector Pulsed (Icm) :

65A

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 15A

Power - Max :

250W

Test Condition :

400V, 15A, 5 Ω, 15V

Packaging :

Tube

Switching Energy :

130μJ (on), 121μJ (off)

Transistor Element Material :

SILICON

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

Gate-Emitter Voltage-Max :

20V

Transistor Application :

Motor Control

Turn On Time :

20 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Max Power Dissipation :

250W

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

RoHS Compliant

Mount :

Through Hole

JEDEC-95 Code :

TO-247AD

Radiation Hardening :

No

Number of Terminations :

3

Pin Count :

3

Mounting Type :

Through Hole

JESD-609 Code :

e1

Case Connection :

COLLECTOR

Element Configuration :

Single

Turn Off Time-Nom (toff) :

157 ns

Gate Charge :

55nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Collector Current :

56A

Pbfree Code :

yes

IGBT Type :

PT

Published :

1999

Collector Emitter Voltage (VCEO) :

600V

Input Type :

Standard

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3