APT15GP60BDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

6V

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JEDEC-95 Code :

TO-247AD

Turn Off Time-Nom (toff) :

157 ns

Transistor Element Material :

SILICON

Power - Max :

250W

Additional Feature :

LOW CONDUCTION LOSS

Number of Terminations :

3

Td (on/off) @ 25°C :

8ns/29ns

Packaging :

Tube

Pin Count :

3

JESD-609 Code :

e1

Mount :

Through Hole

Gate Charge :

55nC

Max Collector Current :

56A

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 15A

Input Type :

Standard

IGBT Type :

PT

Transistor Application :

Motor Control

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

20 ns

Test Condition :

400V, 15A, 5 Ω, 15V

Published :

1999

Max Power Dissipation :

250W

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-247-3

Current - Collector Pulsed (Icm) :

65A

Collector Emitter Voltage (VCEO) :

600V

Element Configuration :

Single

Switching Energy :

130μJ (on), 121μJ (off)