APT10021JLL
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- Mfr.Part #
- APT10021JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 37A ISOTOP
- Stock
- 24,216
- In Stock ：
- 24,216
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 1997
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Series :
- POWER MOS 7®
- Continuous Drain Current (ID) :
- 37A
- Transistor Application :
- SWITCHING
- Package / Case :
- SOT-227-4, miniBLOC
- Current Rating :
- 37A
- Input Capacitance (Ciss) (Max) @ Vds :
- 9750pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 395nC @ 10V
- Packaging :
- Tube
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 694W
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Mount :
- Chassis Mount, Screw
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 18.5A, 10V
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 1000V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Rise Time :
- 22ns
- Voltage - Rated DC :
- 1kV
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Terminal Form :
- UNSPECIFIED
- Terminal Position :
- UPPER
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Factory Lead Time :
- 19 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Power Dissipation-Max :
- 694W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 4
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn On Delay Time :
- 29 ns
- Fall Time (Typ) :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 80 ns
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Datasheets
- APT10021JLL
N-Channel Tube 210m Ω @ 18.5A, 10V ±30V 9750pF @ 25V 395nC @ 10V 1000V SOT-227-4, miniBLOC
APT10021JLL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9750pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 29 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APT10021JLL Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 37A
the turn-off delay time is 80 ns
a 1000V drain to source voltage (Vdss)
APT10021JLL Applications
There are a lot of Microsemi Corporation
APT10021JLL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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