APT10021JLL
- Mfr.Part #
- APT10021JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 37A ISOTOP
- Stock
- 24,216
- In Stock :
- 24,216
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- UPPER
- Series :
- POWER MOS 7®
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 694W
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 9750pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Number of Terminations :
- 4
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 395nC @ 10V
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 1kV
- Number of Elements :
- 1
- Current Rating :
- 37A
- Fall Time (Typ) :
- 20 ns
- Rise Time :
- 22ns
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 29 ns
- Transistor Element Material :
- SILICON
- Terminal Form :
- UNSPECIFIED
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 18.5A, 10V
- Factory Lead Time :
- 19 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 1997
- Package / Case :
- SOT-227-4, miniBLOC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 694W Tc
- Drain to Source Voltage (Vdss) :
- 1000V
- Continuous Drain Current (ID) :
- 37A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Chassis Mount, Screw
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Number of Pins :
- 4
- Mounting Type :
- Chassis Mount
- Pin Count :
- 4
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 80 ns
- Datasheets
- APT10021JLL

N-Channel Tube 210m Ω @ 18.5A, 10V ±30V 9750pF @ 25V 395nC @ 10V 1000V SOT-227-4, miniBLOC
APT10021JLL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9750pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 29 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APT10021JLL Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 37A
the turn-off delay time is 80 ns
a 1000V drain to source voltage (Vdss)
APT10021JLL Applications
There are a lot of Microsemi Corporation
APT10021JLL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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