APT1001RBVRG
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- Mfr.Part #
- APT1001RBVRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 11A TO247
- Stock
- 39,160
- In Stock ：
- 39,160
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 11ns
- Packaging :
- Tube
- Voltage - Rated DC :
- 1kV
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 11A
- Input Capacitance :
- 3.66nF
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Series :
- POWER MOS V®
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 1000V
- Turn-Off Delay Time :
- 55 ns
- Published :
- 1997
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 12 ns
- Package / Case :
- TO-247-3
- Supplier Device Package :
- TO-247 [B]
- Input Capacitance (Ciss) (Max) @ Vds :
- 3660pF @ 25V
- Max Operating Temperature :
- 150°C
- Current Rating :
- 11A
- Power Dissipation :
- 280W
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 12 ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 500mA, 10V
- Datasheets
- APT1001RBVRG
N-Channel Tube 1Ohm @ 500mA, 10V 3660pF @ 25V 225nC @ 10V 1000V TO-247-3
APT1001RBVRG Overview
A device's maximum input capacitance is 3660pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).
APT1001RBVRG Features
a continuous drain current (ID) of 11A
the turn-off delay time is 55 ns
a 1000V drain to source voltage (Vdss)
APT1001RBVRG Applications
There are a lot of Microsemi Corporation
APT1001RBVRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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