APT1001R1BN
- Mfr.Part #
- APT1001R1BN
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10.5A TO247AD
- Stock
- 33,136
- In Stock :
- 33,136
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Series :
- POWER MOS IV®
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-247AD
- DS Breakdown Voltage-Min :
- 1000V
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Feedback Cap-Max (Crss) :
- 160 pF
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Power Dissipation-Max :
- 310W Tc
- Pulsed Drain Current-Max (IDM) :
- 42A
- Peak Reflow Temperature (Cel) :
- 310
- Input Capacitance (Ciss) (Max) @ Vds :
- 2950pF @ 25V
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 62ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5.25A, 10V
- Drain Current-Max (Abs) (ID) :
- 10.5A
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Turn Off Time-Max (toff) :
- 143ns
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- APT1001R1BN
N-Channel Tube 1.1 Ω @ 5.25A, 10V ±30V 2950pF @ 25V 130nC @ 10V 1000V TO-247-3
APT1001R1BN Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2950pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 10.5A.Pulsed drain current is maximum rated peak drain current 42A.A normal operation of the DS requires keeping the breakdown voltage above 1000V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT1001R1BN Features
based on its rated peak drain current 42A.
a 1000V drain to source voltage (Vdss)
APT1001R1BN Applications
There are a lot of Microsemi Corporation
APT1001R1BN applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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