APT1001R1BN

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

10

Series :

POWER MOS IV®

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-247AD

DS Breakdown Voltage-Min :

1000V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

1000V

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Feedback Cap-Max (Crss) :

160 pF

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Surface Mount :

No

Power Dissipation-Max :

310W Tc

Pulsed Drain Current-Max (IDM) :

42A

Peak Reflow Temperature (Cel) :

310

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

FET Type :

N-Channel

Package / Case :

TO-247-3

Number of Terminations :

3

Turn On Time-Max (ton) :

62ns

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5.25A, 10V

Drain Current-Max (Abs) (ID) :

10.5A

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Turn Off Time-Max (toff) :

143ns

Operating Mode :

ENHANCEMENT MODE