APT1002RBNG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

28A

Vgs (Max) :

±30V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Surface Mount :

No

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Drain Current-Max (Abs) (ID) :

7A

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

1000V

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation-Max :

240W Tc

Number of Terminations :

3

JEDEC-95 Code :

TO-247AD

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Pbfree Code :

yes

Drain-source On Resistance-Max :

2Ohm

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Mounting Type :

Through Hole

Series :

POWER MOS IV®