APT1001RSVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

APT1001

Drain to Source Voltage (Vdss) :

1000 V

Avalanche Energy Rating (Eas) :

1210 mJ

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

1000 V

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Transistor Application :

SWITCHING

Terminal Finish :

PURE MATTE TIN

Technology :

MOSFET (Metal Oxide)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1Ohm @ 500mA, 10V

Drain-source On Resistance-Max :

1 Ω

Pin Count :

3

Case Connection :

DRAIN

Supplier Device Package :

D3 [S]

Series :

POWER MOS V®

Qualification Status :

Not Qualified

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

225 nC @ 10 V

Mounting Type :

Surface Mount

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

Package :

Tube

Peak Reflow Temperature (Cel) :

245

Package Shape :

RECTANGULAR

Number of Terminals :

2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3660 pF @ 25 V

FET Feature :

-

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

44 A

JESD-30 Code :

R-PSSO-G2