APT10035B2FLLG
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- Mfr.Part #
- APT10035B2FLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 28A T-MAX
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Packaging :
- Tube
- Turn On Delay Time :
- 12 ns
- Published :
- 1997
- Rds On (Max) @ Id, Vgs :
- 370m Ω @ 14A, 10V
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 690W Tc
- Turn-Off Delay Time :
- 36 ns
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 186nC @ 10V
- Voltage - Rated DC :
- 1kV
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5185pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3 Variant
- Pin Count :
- 3
- Series :
- POWER MOS 7®
- Current Rating :
- 28A
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 28A
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- Rise Time :
- 10ns
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 690W
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 1000V
- Fall Time (Typ) :
- 9 ns
- Datasheets
- APT10035B2FLLG
N-Channel Tube 370m Ω @ 14A, 10V ±30V 5185pF @ 25V 186nC @ 10V 1000V TO-247-3 Variant
APT10035B2FLLG Overview
The maximum input capacitance of this device is 5185pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 28A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 36 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APT10035B2FLLG Features
a continuous drain current (ID) of 28A
the turn-off delay time is 36 ns
a 1000V drain to source voltage (Vdss)
APT10035B2FLLG Applications
There are a lot of Microsemi Corporation
APT10035B2FLLG applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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