APT13GP120KG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Series :

POWER MOS 7®

Max Collector Current :

41A

Switching Energy :

114μJ (on), 165μJ (off)

Current - Collector Pulsed (Icm) :

50A

Mount :

Through Hole

Transistor Element Material :

SILICON

Additional Feature :

LOW CONDUCTION LOSS

JEDEC-95 Code :

TO-220AB

Test Condition :

600V, 13A, 5 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pin Count :

3

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e1

Radiation Hardening :

No

Case Connection :

COLLECTOR

Turn On Time :

21 ns

Input Type :

Standard

Voltage - Rated DC :

1.2kV

Transistor Application :

POWER CONTROL

Gate Charge :

55nC

Td (on/off) @ 25°C :

9ns/28ns

Current Rating :

41A

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 13A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Number of Elements :

1

Element Configuration :

Single

Pbfree Code :

yes

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

270 ns

IGBT Type :

PT

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Voltage (VCEO) :

1.2kV

Collector Emitter Breakdown Voltage :

1.2kV

Max Power Dissipation :

250W