APT11GF120KRG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

156W

Voltage - Rated DC :

1.2kV

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Gate Charge :

65nC

Collector Emitter Breakdown Voltage :

1.2kV

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

6.5V

Collector Emitter Voltage (VCEO) :

1.2kV

Td (on/off) @ 25°C :

7ns/100ns

Packaging :

Tube

Radiation Hardening :

No

Case Connection :

Isolated

Max Collector Current :

25A

Input Type :

Standard

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 8A

Pbfree Code :

yes

Package / Case :

TO-220-3

Turn Off Time-Nom (toff) :

161 ns

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Gate-Emitter Voltage-Max :

30V

Current - Collector Pulsed (Icm) :

44A

Number of Terminations :

3

Published :

2005

Current Rating :

25A

Turn On Time :

12 ns

Transistor Application :

POWER CONTROL

RoHS Status :

RoHS Compliant

IGBT Type :

NPT

Element Configuration :

Single

Terminal Finish :

PURE MATTE TIN

Switching Energy :

300μJ (on), 285μJ (off)

Pin Count :

3

Additional Feature :

FAST SWITCHING

Test Condition :

800V, 8A, 10 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

1200V