APT11GF120KRG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Switching Energy :

300μJ (on), 285μJ (off)

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Pin Count :

3

Case Connection :

Isolated

Test Condition :

800V, 8A, 10 Ω, 15V

Turn On Time :

12 ns

Turn Off Time-Nom (toff) :

161 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 8A

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6.5V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input Type :

Standard

Current Rating :

25A

Gate-Emitter Voltage-Max :

30V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Additional Feature :

FAST SWITCHING

Published :

2005

Package / Case :

TO-220-3

Packaging :

Tube

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

1.2kV

Current - Collector Pulsed (Icm) :

44A

Max Power Dissipation :

156W

Terminal Finish :

PURE MATTE TIN

JESD-609 Code :

e3

Max Collector Current :

25A

Number of Elements :

1

Transistor Application :

POWER CONTROL

IGBT Type :

NPT

Voltage - Rated DC :

1.2kV

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

7ns/100ns

Gate Charge :

65nC

Collector Emitter Breakdown Voltage :

1.2kV