APT11GF120KRG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Gate Charge :

65nC

Mounting Type :

Through Hole

Turn On Time :

12 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Published :

2005

Current - Collector Pulsed (Icm) :

44A

Switching Energy :

300μJ (on), 285μJ (off)

Transistor Element Material :

SILICON

Input Type :

Standard

Max Power Dissipation :

156W

Gate-Emitter Voltage-Max :

30V

Collector Emitter Breakdown Voltage :

1.2kV

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

1.2kV

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 8A

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

1.2kV

Td (on/off) @ 25°C :

7ns/100ns

Element Configuration :

Single

Current Rating :

25A

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

PURE MATTE TIN

Package / Case :

TO-220-3

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6.5V

Case Connection :

Isolated

IGBT Type :

NPT

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Pin Count :

3

Max Collector Current :

25A

Test Condition :

800V, 8A, 10 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

161 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

FAST SWITCHING

Radiation Hardening :

No

Number of Terminations :

3

Transistor Application :

POWER CONTROL