APT100GN120B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

300A

Element Configuration :

Single

Gate-Emitter Thr Voltage-Max :

6.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 100A

Published :

1999

Max Collector Current :

245A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Power Dissipation :

960W

Gate Charge :

540nC

Turn-Off Delay Time :

615 ns

Collector Emitter Breakdown Voltage :

1.2kV

Polarity/Channel Type :

N-Channel

Input Type :

Standard

JESD-609 Code :

e1

Number of Elements :

1

Turn On Time :

100 ns

Switching Energy :

11mJ (on), 9.5mJ (off)

Number of Pins :

3

Pin Count :

3

Transistor Element Material :

SILICON

Factory Lead Time :

24 Weeks

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Td (on/off) @ 25°C :

50ns/615ns

Terminal Finish :

TIN SILVER COPPER

Package / Case :

TO-247-3 Variant

Power - Max :

960W

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

935 ns

Mounting Type :

Through Hole

Number of Terminations :

3

IGBT Type :

Trench Field Stop

Collector Emitter Voltage (VCEO) :

1.2kV

Radiation Hardening :

No

Lead Free :

Lead Free

Pbfree Code :

yes

Test Condition :

800V, 100A, 1 Ω, 15V

Turn On Delay Time :

50 ns

Packaging :

Tube