APT100GN120B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

935 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Switching Energy :

11mJ (on), 9.5mJ (off)

Transistor Application :

POWER CONTROL

Test Condition :

800V, 100A, 1 Ω, 15V

Element Configuration :

Single

Pin Count :

3

Factory Lead Time :

24 Weeks

Radiation Hardening :

No

Max Collector Current :

245A

Number of Pins :

3

Collector Emitter Breakdown Voltage :

1.2kV

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

3

IGBT Type :

Trench Field Stop

Td (on/off) @ 25°C :

50ns/615ns

Lead Free :

Lead Free

Turn On Delay Time :

50 ns

Packaging :

Tube

Current - Collector Pulsed (Icm) :

300A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Package / Case :

TO-247-3 Variant

Polarity/Channel Type :

N-Channel

Power - Max :

960W

Turn On Time :

100 ns

Turn-Off Delay Time :

615 ns

Number of Elements :

1

Max Power Dissipation :

960W

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

1.2kV

Gate Charge :

540nC

Additional Feature :

High Reliability

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 100A

Case Connection :

COLLECTOR

Mount :

Through Hole

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Published :

1999

Gate-Emitter Thr Voltage-Max :

6.5V

Input Type :

Standard