2SD1664T100P
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- Mfr.Part #
- 2SD1664T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A MPT3
- Stock
- 1,526
- In Stock ：
- 1,526
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 82
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Published :
- 1998
- Collector Emitter Breakdown Voltage :
- 32V
- Max Breakdown Voltage :
- 32V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e2
- Contact Plating :
- Copper, Tin
- HTS Code :
- 8541.21.00.75
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 32V
- VCEsat-Max :
- 0.4 V
- Base Part Number :
- 2SD1664
- Max Power Dissipation :
- 2W
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Gain Bandwidth Product :
- 150MHz
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 3V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN COPPER
- Voltage - Rated DC :
- 32V
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- Current Rating :
- 1A
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD1664T100P
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1664T100P Overview
This device has a DC current gain of 82 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 1A volts is possible.
2SD1664T100P Features
the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100P Applications
There are a lot of ROHM Semiconductor
2SD1664T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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