2SD1012F-SPA

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Mfr.Part #
2SD1012F-SPA
Manufacturer
onsemi
Package / Case
3-SIP
Datasheet
Download
Description
TRANS NPN 15V 0.7A 3SPA
Stock
5,710
In Stock :
5,710

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
20V
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
125°C TJ
Vce Saturation (Max) @ Ib, Ic :
80mV @ 10mA, 100mA
Packaging :
Bulk
hFE Min :
160
Frequency - Transition :
250MHz
Published :
2012
Terminal Finish :
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Package / Case :
3-SIP
Surface Mount :
No
Max Collector Current :
700mA
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 50mA 2V
Number of Pins :
3
ECCN Code :
EAR99
Transistor Type :
NPN
Mounting Type :
Through Hole
Max Power Dissipation :
250mW
Configuration :
Single
Current - Collector Cutoff (Max) :
1μA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
250mW
Collector Emitter Voltage (VCEO) :
15V
Polarity/Channel Type :
NPN
Base Part Number :
2SD1012
RoHS Status :
RoHS Compliant
Collector Emitter Breakdown Voltage :
15V
Lead Free :
Lead Free
Datasheets
2SD1012F-SPA
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1012F-SPA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:125°C TJ, Package / Case:3-SIP, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:2SD1012, 2SD1012F-SPA pinout, 2SD1012F-SPA datasheet PDF, 2SD1012F-SPA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1012F-SPA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1012F-SPA


NPN 125°C TJ 1μA ICBO NPN 3-SIP Bulk Through Hole

2SD1012F-SPA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 50mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 80mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 700mA volts.

2SD1012F-SPA Features


the DC current gain for this device is 160 @ 50mA 2V
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


2SD1012F-SPA Applications


There are a lot of ON Semiconductor
2SD1012F-SPA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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