2SD1048-6-TB-E
- Mfr.Part #
- 2SD1048-6-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Max Collector Current :
- 700mA
- Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 15V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 80mV
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 15V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 20V
- Transition Frequency :
- 250MHz
- JESD-609 Code :
- e6
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 7 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Length :
- 2.9mm
- Height :
- 1.1mm
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Width :
- 1.5mm
- Operating Temperature :
- 125°C TJ
- Polarity/Channel Type :
- NPN
- Datasheets
- 2SD1048-6-TB-E

NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-6-TB-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 80mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SD1048-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-6-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-6-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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