2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 300
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Max Collector Current :
- 700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Number of Elements :
- 1
- Width :
- 1.5mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 250MHz
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 20V
- Terminal Form :
- Gull wing
- Transition Frequency :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 15V
- Collector Emitter Saturation Voltage :
- 30mV
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 125°C TJ
- Max Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Published :
- 2012
- Frequency :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 15V
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- JESD-609 Code :
- e6
- Power Dissipation :
- 200mW
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Length :
- 2.9mm
- Datasheets
- 2SD1048-7-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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