2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 30mV
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Operating Temperature :
- 125°C TJ
- Pin Count :
- 3
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Height :
- 1.1mm
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- JESD-609 Code :
- e6
- hFE Min :
- 300
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 15V
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 15V
- Max Collector Current :
- 700mA
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 15V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2012
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- Transition Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- 20V
- Max Power Dissipation :
- 200mW
- Width :
- 1.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Lead Free :
- Lead Free
- Datasheets
- 2SD1048-7-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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