2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 15V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Published :
- 2012
- JESD-609 Code :
- e6
- ECCN Code :
- EAR99
- Width :
- 1.5mm
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Length :
- 2.9mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Operating Temperature :
- 125°C TJ
- Frequency :
- 250MHz
- Surface Mount :
- yes
- Transition Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Gain Bandwidth Product :
- 250MHz
- Max Collector Current :
- 700mA
- Collector Base Voltage (VCBO) :
- 20V
- Max Power Dissipation :
- 200mW
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 30mV
- Collector Emitter Breakdown Voltage :
- 15V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 15V
- hFE Min :
- 300
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Datasheets
- 2SD1048-7-TB-E
2SD1048-7-TB-E Documents
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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