2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 125°C TJ
- Frequency :
- 250MHz
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Number of Pins :
- 3
- Pin Count :
- 3
- Element Configuration :
- Single
- hFE Min :
- 300
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Collector Emitter Breakdown Voltage :
- 15V
- Max Breakdown Voltage :
- 15V
- Gain Bandwidth Product :
- 250MHz
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 20V
- Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 30mV
- Width :
- 1.5mm
- Collector Emitter Voltage (VCEO) :
- 15V
- Lead Free :
- Lead Free
- Max Collector Current :
- 700mA
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.9mm
- JESD-609 Code :
- e6
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Datasheets
- 2SD1048-7-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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