2SD1012G-SPA
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- Mfr.Part #
- 2SD1012G-SPA
- Manufacturer
- onsemi
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3SPA
- Stock
- 11,335
- In Stock ：
- 11,335
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-SIP
- Frequency - Transition :
- 250MHz
- Current - Collector (Ic) (Max) :
- 700mA
- Supplier Device Package :
- 3-SPA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Power - Max :
- 250mW
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Operating Temperature :
- 125°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 50mA 2V
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SD1012G-SPA
NPN 125°C TJ 1μA ICBO 3-SIP Bulk Through Hole
2SD1012G-SPA Overview
In this device, the DC current gain is 280 @ 50mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 80mV @ 10mA, 100mA.Product comes in the supplier's device package 3-SPA.There is a 15V maximal voltage in the device due to collector-emitter breakdown.
2SD1012G-SPA Features
the DC current gain for this device is 280 @ 50mA 2V
the vce saturation(Max) is 80mV @ 10mA, 100mA
the supplier device package of 3-SPA
2SD1012G-SPA Applications
There are a lot of Rochester Electronics, LLC
2SD1012G-SPA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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