2SD1012G-SPA-AC
- Mfr.Part #
- 2SD1012G-SPA-AC
- Manufacturer
- onsemi
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3SPA
- Stock
- 15,017
- In Stock :
- 15,017
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 700mA
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 50mA 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 3-SIP
- Power - Max :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 250MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Supplier Device Package :
- 3-SPA
- Operating Temperature :
- 125°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Datasheets
- 2SD1012G-SPA-AC

NPN 125°C TJ 1μA ICBO 3-SIP Tape & Reel (TR) Through Hole
2SD1012G-SPA-AC Overview
In this device, the DC current gain is 280 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 80mV @ 10mA, 100mA.Supplier device package 3-SPA comes with the product.The device exhibits a collector-emitter breakdown at 15V.
2SD1012G-SPA-AC Features
the DC current gain for this device is 280 @ 50mA 2V
the vce saturation(Max) is 80mV @ 10mA, 100mA
the supplier device package of 3-SPA
2SD1012G-SPA-AC Applications
There are a lot of Rochester Electronics, LLC
2SD1012G-SPA-AC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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