2DB1714-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

ECCN Code :

EAR99

Power - Max :

900mW

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Collector Emitter Voltage (VCEO) :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

30V

Terminal Form :

Flat

Max Power Dissipation :

900mW

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

30V

Factory Lead Time :

9 Weeks

Max Breakdown Voltage :

30V

Published :

2008

Width :

2.5mm

JESD-30 Code :

R-PSSO-F3

Emitter Base Voltage (VEBO) :

6V

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

370mV @ 75mA, 1.5A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Frequency :

200MHz

Max Collector Current :

2A

Package / Case :

TO-243AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Gain Bandwidth Product :

200MHz

Collector Emitter Saturation Voltage :

-370mV

Pbfree Code :

yes

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Number of Pins :

4

Weight :

51.993025mg

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

4.5mm

Radiation Hardening :

No

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Height :

1.4mm

Element Configuration :

Single

Transition Frequency :

200MHz