2DB1689-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

500mW

Published :

2008

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Termination :

SMD/SMT

Collector Emitter Voltage (VCEO) :

12V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Collector Current :

1.5A

Weight :

6.010099mg

Height :

1mm

Element Configuration :

Single

Frequency :

300MHz

Package / Case :

SC-70, SOT-323

Factory Lead Time :

16 Weeks

Max Power Dissipation :

300mW

Transition Frequency :

300MHz

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Mount :

Surface Mount

Gain Bandwidth Product :

300MHz

Power - Max :

300mW

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Elements :

1

hFE Min :

270

Max Breakdown Voltage :

12V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Width :

1.3mm

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Length :

2.15mm

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

12V

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

15V

Terminal Position :

Dual

REACH SVHC :

No SVHC

Pin Count :

3