ZXMN6A25G

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

60V

Gate Charge (Qg) (Max) @ Vgs :

20.4nC @ 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

2W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-261-4, TO-261AA

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Element Material :

SILICON

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

6.7A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1063pF @ 30V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

4.8A

Pin Count :

4

Published :

2012

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-G4

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.05Ohm

Pulsed Drain Current-Max (IDM) :

28.5A