ZXMN6A11GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

4.6 ns

Terminal Position :

Dual

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA

Case Connection :

DRAIN

Turn On Delay Time :

1.95 ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW THRESHOLD

Transistor Element Material :

SILICON

Published :

2012

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

4

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

3.1A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PDSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

3.8A

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Number of Channels :

1

Rise Time :

3.5ns

Current Rating :

2.7A

Weight :

7.994566mg

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 40V

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

60V

Power Dissipation-Max :

2W Ta

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

2W

ECCN Code :

EAR99

Turn-Off Delay Time :

8.2 ns