ZXMN6A08E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW THRESHOLD

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Number of Elements :

1

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

80m Ω @ 4.8A, 10V

JESD-609 Code :

e3

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G6

Drain-source On Resistance-Max :

0.08Ohm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

459pF @ 40V

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2012

Package / Case :

SOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Power Dissipation-Max :

1.1W Ta

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

2.8A

Transistor Element Material :

SILICON