ZXMN6A07FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.3Ohm

Number of Terminations :

3

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

625mW Ta

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Reach Compliance Code :

Compliant

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

250m Ω @ 1.8A, 10V

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

166pF @ 40V

Qualification Status :

Not Qualified

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 10V

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

1.1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED