ZXMN3F30FHTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

318pF @ 15V

Resistance :

47mOhm

Width :

1.4mm

Number of Elements :

1

Fall Time (Typ) :

2.6 ns

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Pin Count :

3

Height :

1.02mm

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

47m Ω @ 3.2A, 10V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Rise Time :

2.6ns

Power Dissipation :

1.4W

Lead Free :

Lead Free

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

950mW Ta

Factory Lead Time :

17 Weeks

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Published :

2008

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4.6A

Number of Terminations :

3

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Transistor Element Material :

SILICON

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Length :

3.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

17 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Turn On Delay Time :

1.6 ns

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Breakdown Voltage :

30V

Weight :

7.994566mg