ZXMN3B01FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

0.7V @ 250μA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Vgs (Max) :

±12V

Number of Elements :

1

Terminal Position :

Dual

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Power Dissipation-Max :

625mW Ta

Drain-source On Resistance-Max :

0.15Ohm

Drain Current-Max (Abs) (ID) :

1.7A

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

2.93nC @ 4.5V

Mounting Type :

Surface Mount

Number of Terminations :

3

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.7A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

258pF @ 15V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

17 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3