ZXMN3A03E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

3.7A

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-23-6

JESD-609 Code :

e3

Power Dissipation-Max :

1.1W Ta

Surface Mount :

yes

Published :

2012

Terminal Form :

Gull wing

Terminal Position :

Dual

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

12.6nC @ 10V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

50m Ω @ 7.8A, 10V

Number of Terminations :

6

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.05Ohm

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V