ZXMN3A03E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Drain-source On Resistance-Max :

0.05Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12.6nC @ 10V

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3.7A

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Pin Count :

6

Rds On (Max) @ Id, Vgs :

50m Ω @ 7.8A, 10V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Published :

2012

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.1W Ta

JESD-609 Code :

e3

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G6

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ