ZXMN3A02X8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.1W

Pin Count :

8

Drain-source On Resistance-Max :

0.025Ohm

Published :

2012

Lead Free :

Lead Free

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

5.5ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

26.8nC @ 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

5.3A

Current Rating :

6.7A

Fall Time (Typ) :

5.5 ns

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

25m Ω @ 12A, 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

JESD-30 Code :

S-PDSO-G8

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Turn-Off Delay Time :

35 ns

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

MO-187AA

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)